Michel Abou Khalil, D. Schreurs, B. Nauwelaers, M. Van Rossum, Romain Maciejko and Ke Wu
Article (1997)
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| Additional Information: | Nom historique du département: Département de génie électrique et de génie informatique |
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| Department: |
Department of Electrical Engineering Department of Computer Engineering and Software Engineering Department of Engineering Physics |
| Research Center: | POLY-GRAMES - Advanced Research Centre in Microwaves and Space Electronics |
| PolyPublie URL: | https://publications.polymtl.ca/30739/ |
| Journal Title: | Journal of Applied Physics (vol. 82, no. 12) |
| Publisher: | American Institute of Physics |
| DOI: | 10.1063/1.366521 |
| Official URL: | https://doi.org/10.1063/1.366521 |
| Date Deposited: | 18 Apr 2023 15:23 |
| Last Modified: | 25 Sep 2024 16:12 |
| Cite in APA 7: | Abou Khalil, M., Schreurs, D., Nauwelaers, B., Van Rossum, M., Maciejko, R., & Wu, K. (1997). Effect of capture and escape phenomena in Monte Carlo technique on the simulation of the nonlinear characteristics in high electron mobility transistors. Journal of Applied Physics, 82(12), 6312-6318. https://doi.org/10.1063/1.366521 |
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