Effect of capture and escape phenomena in Monte Carlo technique on the simulation of the nonlinear characteristics in high electron mobility transistors

Michel Abou Khalil, Dominique Schreurs, Bart Nauwelaers, M. Van Rossum, Romain Maciejko and Ke Wu

Article (1997)

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Additional Information:	Nom historique du département: Département de génie électrique et de génie informatique
Department:	Department of Electrical Engineering Department of Computer Engineering and Software Engineering Department of Engineering Physics
Research Center:	POLY-GRAMES - Advanced Research Centre in Microwaves and Space Electronics
PolyPublie URL:	https://publications.polymtl.ca/30739/
Journal Title:	Journal of Applied Physics (vol. 82, no. 12)
Publisher:	American Institute of Physics
DOI:	10.1063/1.366521
Official URL:	https://doi.org/10.1063/1.366521
Date Deposited:	18 Apr 2023 15:23
Last Modified:	28 Apr 2026 13:31

Cite in APA 7:	Abou Khalil, M., Schreurs, D., Nauwelaers, B., Van Rossum, M., Maciejko, R., & Wu, K. (1997). Effect of capture and escape phenomena in Monte Carlo technique on the simulation of the nonlinear characteristics in high electron mobility transistors. Journal of Applied Physics, 82(12), 6312-6318. https://doi.org/10.1063/1.366521
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