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Effect of capture and escape phenomena in Monte Carlo technique on the simulation of the nonlinear characteristics in high electron mobility transistors

Michel Abou Khalil, D. Schreurs, B. Nauwelaers, M. Van Rossum, Romain Maciejko and Ke Wu

Article (1997)

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Additional Information: Nom historique du département: Département de génie électrique et de génie informatique
Department: Department of Electrical Engineering
Department of Computer Engineering and Software Engineering
Department of Engineering Physics
PolyPublie URL: https://publications.polymtl.ca/30739/
Journal Title: Journal of Applied Physics (vol. 82, no. 12)
Publisher: American Institute of Physics
DOI: 10.1063/1.366521
Official URL: https://doi.org/10.1063/1.366521
Date Deposited: 18 Apr 2023 15:23
Last Modified: 05 Apr 2024 11:20
Cite in APA 7: Abou Khalil, M., Schreurs, D., Nauwelaers, B., Van Rossum, M., Maciejko, R., & Wu, K. (1997). Effect of capture and escape phenomena in Monte Carlo technique on the simulation of the nonlinear characteristics in high electron mobility transistors. Journal of Applied Physics, 82(12), 6312-6318. https://doi.org/10.1063/1.366521

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