Calculation of the HF characteristics in high electron mobility transistors by considering capture and escape phenomena in the Monte Carlo technique

M. Abou-Khalil, Dominique Schreurs, Toshiaki Matsui and Ke Wu

Paper (1997)

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Additional Information:	Nom historique du département: Département de génie électrique et de génie informatique
Department:	Department of Electrical Engineering Department of Computer Engineering and Software Engineering
PolyPublie URL:	https://publications.polymtl.ca/30737/
Conference Title:	Asia-Pacific Microwave Conference (APMC 1997)
Conference Location:	Hong Kong
Conference Date(s):	1997-12-02 - 1997-12-05
Publisher:	Institute of Electrical and Electronics Engineers
DOI:	10.1109/apmc.1997.654637
Official URL:	https://doi.org/10.1109/apmc.1997.654637
Date Deposited:	18 Apr 2023 15:23
Last Modified:	08 Apr 2025 02:21

Cite in APA 7:	Abou-Khalil, M., Schreurs, D., Matsui, T., & Wu, K. (1997, December). Calculation of the HF characteristics in high electron mobility transistors by considering capture and escape phenomena in the Monte Carlo technique [Paper]. Asia-Pacific Microwave Conference (APMC 1997), Hong Kong. https://doi.org/10.1109/apmc.1997.654637
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