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Ambipolar operation of hybrid SiC-carbon nanotube based thin film transistors for logic circuits applications

Brahim Aïssa, Mourad Nedil, A. H. Esam, N. Tabet, Daniel Therriault and Federico Rosei

Article (2012)

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Abstract

We report on the ambipolar operation of back-gated thin film field-effect transistors based on hybrid n-type-SiC/p-type-single-walled carbon nanotube networks made with a simple drop casting process. High-performances such an on/off ratio of 105, on-conductance of 20 μS, and a subthreshold swing of less than 165 mV/decades were obtained. The devices are air-stable and maintained their ambipolar operation characteristics in ambient atmosphere for more than two months. Finally, these hybrid transistors were utilized to demonstrate advanced logic NOR-gates. This could be a fundamental step toward realizing stable operating nanoelectronic devices.

Subjects: 2000 Materials science and technology > 2009 Semiconductors
2000 Materials science and technology > 2010 Thin films/interfaces
2500 Electrical and electronic engineering > 2504 Integrated circuits
Department: Department of Mechanical Engineering
Research Center: CREPEC - Center for Applied Research on Polymers and Composites
Funders: Canada Foundation for Innovation, CRSNG/NSERC, Fonds Québécois de la Recherche sur la Nature et les Technologies (FQRNT), Canada Research Chairs Program
PolyPublie URL: https://publications.polymtl.ca/10389/
Journal Title: Applied Physics Letters (vol. 101, no. 4)
Publisher: American Institute of Physics
DOI: 10.1063/1.4739939
Official URL: https://doi.org/10.1063/1.4739939
Date Deposited: 07 Jul 2022 14:39
Last Modified: 07 Apr 2024 19:48
Cite in APA 7: Aïssa, B., Nedil, M., Esam, A. H., Tabet, N., Therriault, D., & Rosei, F. (2012). Ambipolar operation of hybrid SiC-carbon nanotube based thin film transistors for logic circuits applications. Applied Physics Letters, 101(4), 043121. https://doi.org/10.1063/1.4739939

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