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Andelic, M., Pofelski, A., Bicket, I. C., Assali, S., Koelling, S., Luo, L., Moutanabbir, O., & Botton, G. A. (2024). Sn Alloying Impact on Structural and Electronic Properties of Core-Shell Ge-GeSn Nanowires: A TEM Study. BIO Web of Conferences, 129, 24010-24010. Lien externe
Lemieux-Leduc, C., Atalla, M. R. M., Assali, S., Koelling, S., Daoust, P., Luo, L., Daligou, G. T. E. G., Brodeur, J., Kéna-Cohen, S., Peter, Y.-A., & Moutanabbir, O. (2024). Transfer-printed Multiple GeSn Membrane Mid-infrared Photodetectors. IEEE Journal of Selected Topics in Quantum Electronics, 3450302 (12 pages). Lien externe
Luo, L., Atalla, M. R. M., Assali, S., Koelling, S., & Moutanabbir, O. (2024). Mid-Infrared Top-Gated Ge<inf>0.82</inf>Sn<inf>0.18</inf> Nanowire Phototransistors. Advanced Optical Materials, 2400096 (7 pages). Lien externe
Luo, L., Atalla, M. R. M., Assali, S., Koelling, S., Daligou, G. T. E. G., & Moutanabbir, O. (2024). Mid-infrared Imaging Using Strain-Relaxed Ge1–xSnx Alloys Grown on 20 nm Ge Nanowires. Nano Letters, 24(16), 4979-4986. Lien externe
Moutanabbir, O., Luo, L., Kim, Y., Assali, S., Atalla, M. R. M., Joo, H.-J., Koelling, S., Chen, M., Shi, X., Burt, D., & Nam, D. (2024). Group IV Mid-Infrared Optoelectronics Leveraging Nanoscale Growth Substrates. Meeting abstracts (Electrochemical Society. CD-ROM), MA2024-02(32), 2328-2328. Lien externe
Luo, L. (2024). Ge/Ge1−xSnx Group IV Nanowires for Mid-Wave Infrared Optoelectronics [Thèse de doctorat, Polytechnique Montréal]. Disponible
