Documents publiés en "2020"

Département de génie physique

Assali, S., Attiaoui, A., Atalla, M., Alain, D., Kumar, A., Mukherjee, S., Nicolas, J., Koelling, S., & Moutanabbir, O. (octobre 2020). Engineering SiGeSn Semiconductors for MIR and THz Opto-electronic Devices [Communication écrite]. ECS Meeting Abstracts. Lien externe

Bouthillier, É., Assali, S., Nicolas, J., & Moutanabbir, O. (2020). Decoupling the effects of composition and strain on the vibrational modes of GeSn semiconductors. Semiconductor Science and Technology, 35(9), 9 pages. Lien externe

Cousineau, É., Mukherjee, S., Simone, A., Nicolas, J., & Moutanabbir, O. (2020). Lattice Vibrational Modes in Epitaxial Metastable Germanium-Tin Semiconductors. ECS Meeting Abstracts, MA2020-01(22), 1320-1320. Lien externe

Nicolas, J., Assali, S., Mukherjee, S., Lotnyk, A., & Moutanabbir, O. (2020). Dislocation Pipe Diffusion and Solute Segregation during the Growth of Metastable GeSn. Crystal Growth and Design, 20(5), 3493-3498. Lien externe