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Assali, S., Attiaoui, A., Mukherjee, S., Nicolas, J., & Moutanabbir, O. (2018). TEOS layers for low temperature processing of group IV optoelectronic devices. Journal of Vacuum Science & Technology B, 36(6), 8 pages. Lien externe
Assali, S., Nicolas, J., Mukherjee, S., Bouthillier, É., Attiaoui, A., & Moutanabbir, O. (septembre 2018). Structure and Optoelectronic Properties of Atomically Random Sn-Rich Gesn Semiconductors [Résumé]. AiMES 2018 Meeting, Cancun, Mexico. Publié dans ECS Meeting Abstracts, MA2018-02(31). Lien externe
Moutanabbir, O., & Mukherjee, S. (septembre 2018). Isotopically Programmed Group IV Semiconductors: A Versatile Platform for Quantum Technologies [Résumé]. AiMES 2018 Meeting, Cancun, Mexico. Publié dans ECS Meeting Abstracts, MA2018-02(31). Lien externe
Mukherjee, S., Assali, S., & Moutanabbir, O. (2018). Group IV nanowires for carbon-free energy conversion. Semiconductors and Semimetals, 98, 151-229. Lien externe
Mukherjee, S., Bauer, M., Attiaoui, A., & Moutanabbir, O. (septembre 2018). Atomistic and Optical Properties of Group IV Ultrathin Superlattices [Résumé]. AiMES 2018 Meeting, Cancun, Mexico. Publié dans ECS Meeting Abstracts, MA2018-02(31). Lien externe
Mukherjee, S., Givan, U., Senz, S., De la Mata, M., Arbiol, J., & Moutanabbir, O. (2018). Reduction of thermal conductivity in nanowires by combined engineering of crystal phase and isotope disorder. Nano Letters, 18(5), 3066-3075. Lien externe
Mukherjee, S., Nateghi, N., Jacobberger, R. M., Bouthillier, E., de la Mata, M., Arbiol, J., Coenen, T., Cardinal, D., Levesque, P., Desjardins, P., Martel, R., Arnold, M. S., & Moutanabbir, O. (2018). Growth and luminescence of polytypic InP on epitaxial graphene. Advanced Functional Materials, 28(8), 1705592. Lien externe
