Monter d'un niveau |
Attiaoui, A., & Moutanabbir, O. (2014). Indirect-to-direct band gap transition in relaxed and strained Ge 1-x-ySixSny ternary alloys. Journal of Applied Physics, 116(6). Lien externe
Attiaoui, A., & Moutanabbir, O. (2014). Optical and Electronic Properties of GeSn and GeSiSn Heterostructures and Nanowires. ECS Meeting Abstracts, MA2014-02(35), 1843-1843. Lien externe
Attiaoui, A., & Moutanabbir, O. (octobre 2014). Optical and electronic properties of GeSn and GeSiSn heterostructures and nanowires [Communication écrite]. 6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting, Cancun, Mexico. Lien externe
Rousset, N., Villeneuve, J., Fournier-Lupien, J.-H., Attiaoui, A., Taillon, G., Francoeur, S., & Daigle, O. (juin 2014). Comparison of EMCCD post-processing methods for photon counting flux ranges [Communication écrite]. High Energy, Optical, and Infrared Detectors for Astronomy VI, Montréal, Québec. Lien externe