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Constantin, N., & Ghannouchi, F. M. (mai 1995). Comprehensive experimental investigation of gate current limitation effects on power GaAs FETs RF performances [Communication écrite]. IEEE MTT-S International Microwave Symposium (IMS 1995), Orlando, FL, USA. Lien externe
Constantin, N., & Ghannouchi, F. M. (1995). GaAs FET's gate current behavior and its effects on RF performance and reliability in SSPA's. IEEE Transactions on Microwave Theory and Techniques, 43(12, pt 2), 2918-2925. Lien externe
