Comprehensive experimental investigation of gate current limitation effects on power GaAs FETs RF performances

Nicolas Constantin and Fadhel M. Ghannouchi

Paper (1995)

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Additional Information:	Nom historique du département: Département de génie électrique et de génie informatique
Department:	Department of Electrical Engineering Department of Computer Engineering and Software Engineering
PolyPublie URL:	https://publications.polymtl.ca/32420/
Conference Title:	IEEE MTT-S International Microwave Symposium (IMS 1995)
Conference Location:	Orlando, FL, USA
Conference Date(s):	1995-05-16 - 1995-05-20
Publisher:	IEEE
DOI:	10.1109/mwsym.1995.406007
Official URL:	https://doi.org/10.1109/mwsym.1995.406007
Date Deposited:	18 Apr 2023 15:24
Last Modified:	08 Apr 2025 06:53

Cite in APA 7:	Constantin, N., & Ghannouchi, F. M. (1995, May). Comprehensive experimental investigation of gate current limitation effects on power GaAs FETs RF performances [Paper]. IEEE MTT-S International Microwave Symposium (IMS 1995), Orlando, FL, USA. https://doi.org/10.1109/mwsym.1995.406007
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