Nicolas Constantin and Fadhel M. Ghannouchi
Article (1995)
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| Additional Information: | Nom historique du département: Département de génie électrique et de génie informatique |
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| Department: |
Department of Electrical Engineering Department of Computer Engineering and Software Engineering |
| PolyPublie URL: | https://publications.polymtl.ca/32419/ |
| Journal Title: | IEEE Transactions on Microwave Theory and Techniques (vol. 43, no. 12, pt 2) |
| Publisher: | IEEE |
| DOI: | 10.1109/22.475656 |
| Official URL: | https://doi.org/10.1109/22.475656 |
| Date Deposited: | 18 Apr 2023 15:24 |
| Last Modified: | 08 Apr 2025 06:53 |
| Cite in APA 7: | Constantin, N., & Ghannouchi, F. M. (1995). GaAs FET's gate current behavior and its effects on RF performance and reliability in SSPA's. IEEE Transactions on Microwave Theory and Techniques, 43(12, pt 2), 2918-2925. https://doi.org/10.1109/22.475656 |
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