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Bégin, M., Ghannouchi, F. M., Selmi, L., & Riccò, B. (mai 1994). Instantaneous S parameters measurements of MESFETs under burst bias conditions [Communication écrite]. IEEE Instrumentation and Measurement Technology Conference (IMTC 1994), Hamamatsu, Japan. Lien externe
Borelli, V., Bégin, M., & Ghannouchi, F. M. (1994). Characterization of the transient behavior of a MESFET. (Rapport technique n° EPM-RT-94-05). Disponible
