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Documents dont l'auteur est "Poole, P. J."

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Nombre de documents: 14

A

Allen, C. N., Ortner, G., Dion, C., Poole, P. J., Barrios, P., Lapointe, J., Pakulski, G., Render, W., Fafard, S., & Raymond, S. (2006). External-Cavity Quantum-Dot Laser Tunable Through 1.55 μm. Applied Physics Letters, 88(11). Lien externe

D

Dion, C., Desjardins, P., Shtinkov, N., Schiettekatte, F., Poole, P. J., & Raymond, S. (2008). Effects of grown-in defects on interdiffusion dynamics in inAs/InP(001) quantum dots subjected to rapid thermal annealing. Journal of Applied Physics, 103(8), 083526-083526. Lien externe

Dion, C., Desjardins, P., Shtinkov, N., Robertson, M. D., Schiettekatte, F., Poole, P. J., & Raymond, S. (2008). Intermixing during growth of InAs self-assembled quantum dots in InP: a photoluminescence and tight-binding investigation. Physical Review. B, Condensed Matter and Materials Physics, 77(7), 075338-1. Lien externe

Dion, C., Desjardins, P., Schiettekatte, F., Chicoine, M., Robertson, M. D., Shtinkov, N., Poole, P. J., Wu, X., & Raymond, S. (2008). Vacancy-Mediated Intermixing in Inas/Inp(001) Quantum Dots Subjected to Ion Implantation. Journal of Applied Physics, 104(4), 043527-1. Lien externe

Dion, C., Desjardins, P., Chicoine, M., Schiettekatte, F., Poole, P. J., & Raymond, S. (2007). Drastic Ion-Implantation-Induced Intermixing During the Annealing of Self-Assembled InSs/InP(001) Quantum Dots. Nanotechnology, 18(1), 15404-15500. Lien externe

Dion, C., Poole, P. J., Raymond, S., Desjardins, P., & Schiettekatte, F. (2006). Tuning of the electronic properties of self-assembled InAs/InP(001) quantum dots using grown-in defect mediated intermixing. Applied Physics Letters, 89(13), 31905-31905. Lien externe

G

Gelinas, G., Lanacer, A., Leonelli, R., Masut, R. A., & Poole, P. J. (2010). Carrier thermal escape in families of InAs/InP self-assembled quantum dots. Physical Review. B, Condensed Matter and Materials Physics, 81(23), 235426. Lien externe

Girard, J. F., Dion, C., Desjardins, P., Allen, C. N., Poole, P. J., & Raymond, S. (2004). Tuning of the Electronic Properties of Self-Assembled Inas/Inp(001) Quantum Dots by Rapid Thermal Annealing. Applied Physics Letters, 84(17), 3382-3384. Lien externe

H

Hou, Y., Liu, J. R., Buchanan, M., Thorpe, A. J. S., Poole, P. J., Liu, H. C., Wu, K., Roorda, S., & Zhang, X. P. (2012). Terahertz Generation Using Implanted InGaAs Photomixers and Multi-wavelength Quantum Dot Lasers. Nano-Micro Letters, 4(1), 10-13. Disponible

L

Lu, Z. G., Liu, G. C., Liu, J. R., Poole, P. J., Mao, Y. X., Zeb, K., Xie, X. R., Rahim, M., Vachon, M., Song, C. Y., Qi, Y., Weber, J., Barrios, P., Poitras, D., Sabourin, N., Chen, S., Zhao, P., Huang, L., Askarian, A., ... Wu, K. (janvier 2024). Quantum dot coherent comb lasers for B5G/6G mobile and terrestrial communication systems [Communication écrite]. 2024 Integrated Optics: Devices, Materials, and Technologies, San Francisco, CA, USA (9 pages). Lien externe

Lu, Z. G., Liu, G. C., Poole, P. J., Xie, X. R., Liu, J. R., Mao, Y. X., Barrios, P., Qi, Y., Vachon, M., Song, C. Y., Rahim, M., Poitras, D., Ma, P. H., Weber, J., Zhao, P., Huang, L., Guan, Y. R., Yao, J. P., Wu, K., ... O'Sullivan, M. (mai 2024). Quantum dot laser and amplifier enabled converged optical and wireless access network systems [Communication écrite]. 2024 Photonics North (PN 2024), Vancouver, BC, Canada (2 pages). Lien externe

Lu, Z. G., Liu, G. C., Zeb, K., Xie, X. R., Liu, J. R., Poole, P. J., Mao, Y. X., Barrios, P., Rahim, M., Vachon, M., Song, C. Y., Poitras, D., Weber, J., Sabourin, N., Askariann, A., Zhang, X. P., Yao, J. P., & Wu, K. (juin 2023). High Data Throughput Wireless Networks Based on a Quantum Dash / Dot Multi-Wavelength Laser and Millimeter-Wave-Over-Fiber Transmission Links [Communication écrite]. Photonics North (PN 2023), Montreal, Qc, Canada (2 pages). Lien externe

O

Ortner, G., Allen, C. N., Dion, C., Barrios, P., Poitras, D., Dalacu, D., Pakulski, G., Lapointe, J., Poole, P. J., Render, W., & Raymond, S. (2006). External Cavity InAs/InP Quantum Dot Laser With a Tuning Range of 166 Nm. Applied Physics Letters, 88(12). Lien externe

R

Raymond, S., Labrie, D., Girard, J.-F., Poirier, S., Awirothananon, S., Poole, P. J., Marchand, H., Desjardins, P., & Masut, R. A. (novembre 2000). Tuning of the electronic properties of self-assembled InAs/InP quantum dots by rapid thermal annealing [Communication écrite]. Semiconductor quantum dots II, Boston, USA. Non disponible

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