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Lu, Z. G., Liu, G. C., Zeb, K., Xie, X. R., Liu, J. R., Poole, P. J., Mao, Y. X., Barrios, P., Rahim, M., Vachon, M., Song, C. Y., Poitras, D., Weber, J., Sabourin, N., Askariann, A., Zhang, X. P., Yao, J. P., & Wu, K. (juin 2023). High Data Throughput Wireless Networks Based on a Quantum Dash / Dot Multi-Wavelength Laser and Millimeter-Wave-Over-Fiber Transmission Links [Communication écrite]. Photonics North (PN 2023), Montreal, Qc, Canada (2 pages). Lien externe
Hou, Y., Liu, J. R., Buchanan, M., Thorpe, A. J. S., Poole, P. J., Liu, H. C., Wu, K., Roorda, S., & Zhang, X. P. (2012). Terahertz Generation Using Implanted InGaAs Photomixers and Multi-wavelength Quantum Dot Lasers. Nano-Micro Letters, 4(1), 10-13. Disponible
Gelinas, G., Lanacer, A., Leonelli, R., Masut, R. A., & Poole, P. J. (2010). Carrier thermal escape in families of InAs/InP self-assembled quantum dots. Physical Review. B, Condensed Matter and Materials Physics, 81(23), 235426. Lien externe
Dion, C., Desjardins, P., Shtinkov, N., Schiettekatte, F., Poole, P. J., & Raymond, S. (2008). Effects of grown-in defects on interdiffusion dynamics in inAs/InP(001) quantum dots subjected to rapid thermal annealing. Journal of Applied Physics, 103(8), 083526-083526. Lien externe
Dion, C., Desjardins, P., Shtinkov, N., Robertson, M. D., Schiettekatte, F., Poole, P. J., & Raymond, S. (2008). Intermixing during growth of InAs self-assembled quantum dots in InP: a photoluminescence and tight-binding investigation. Physical Review. B, Condensed Matter and Materials Physics, 77(7), 075338-1. Lien externe
Dion, C., Desjardins, P., Schiettekatte, F., Chicoine, M., Robertson, M. D., Shtinkov, N., Poole, P. J., Wu, X., & Raymond, S. (2008). Vacancy-Mediated Intermixing in Inas/Inp(001) Quantum Dots Subjected to Ion Implantation. Journal of Applied Physics, 104(4), 043527-1. Lien externe
Dion, C., Desjardins, P., Chicoine, M., Schiettekatte, F., Poole, P. J., & Raymond, S. (2007). Drastic Ion-Implantation-Induced Intermixing During the Annealing of Self-Assembled InSs/InP(001) Quantum Dots. Nanotechnology, 18(1), 15404-15500. Lien externe
Ortner, G., Allen, C. N., Dion, C., Barrios, P., Poitras, D., Dalacu, D., Pakulski, G., Lapointe, J., Poole, P. J., Render, W., & Raymond, S. (2006). External Cavity InAs/InP Quantum Dot Laser With a Tuning Range of 166 Nm. Applied Physics Letters, 88(12). Lien externe
Allen, C. N., Ortner, G., Dion, C., Poole, P. J., Barrios, P., Lapointe, J., Pakulski, G., Render, W., Fafard, S., & Raymond, S. (2006). External-Cavity Quantum-Dot Laser Tunable Through 1.55 μm. Applied Physics Letters, 88(11). Lien externe
Dion, C., Poole, P. J., Raymond, S., Desjardins, P., & Schiettekatte, F. (2006). Tuning of the electronic properties of self-assembled InAs/InP(001) quantum dots using grown-in defect mediated intermixing. Applied Physics Letters, 89(13), 31905-31905. Lien externe
Girard, J. F., Dion, C., Desjardins, P., Allen, C. N., Poole, P. J., & Raymond, S. (2004). Tuning of the Electronic Properties of Self-Assembled Inas/Inp(001) Quantum Dots by Rapid Thermal Annealing. Applied Physics Letters, 84(17), 3382-3384. Lien externe
Raymond, S., Labrie, D., Girard, J.-F., Poirier, S., Awirothananon, S., Poole, P. J., Marchand, H., Desjardins, P., & Masut, R. A. (novembre 2000). Tuning of the electronic properties of self-assembled InAs/InP quantum dots by rapid thermal annealing [Communication écrite]. Semiconductor quantum dots II, Boston, USA. Non disponible
