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Lavoie, C., Purtell, R., Coïa, C., Detavernier, C., Desjardins, P., Jordan-Sweet, J., Cabral, C. J., & D'Heurle, F. M. (mai 2002). In situ monitoring of thin film reactions during rapid thermal annealing: nickel silicide formation [Communication écrite]. Rapid thermal and other short-time processing technologies III Electrochemical Society, Philadelphia, PA, USA. Lien externe
Chun, J.-S., Desjardins, P., Petrov, I., Greene, J. E., Lavoie, C., & Cabral, C. J. (2001). Interfacial reaction pathways and kinetics during annealing of epitaxial Al(001)/TiN(001) model diffusion barrier systems. Thin Solid Films, 391(1), 69-80. Lien externe