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Items where Author is "Bentoumi, G."

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Number of items: 7.

B

Bentoumi, G., Li, L., Jonkmans, G., Marleau, G., Sur, B., Fritzsche, H., & Dai, X. (2013). Characterization of a liquid scintillator based on linear alkyl benzene for neutron detection. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 701, 221-224. External link

Bentoumi, G., Dai, X., Ho, A., Jonkmans, G., Li, L., & Marleau, G. (2011, June). Simulation and design of a neutron detector based on Boron-Loaded linear alkyl benzene (LAB) liquid scintillator [Paper]. 32nd Annual Conference of the CNS, Niagara Falls, Canada. Unavailable

Bentoumi, G., Yaïche, Z., Leonelli, R., Beaudry, J. N., Desjardins, P., & Masut, R. A. (2008). Low-Temperature Emission in Dilute GaAsN Alloys Grown by Metalorganic Vapor Phase Epitaxy. Journal of Applied Physics, 103(6), 063526-1-063526-5. External link

Bentoumi, G., Timoshevskii, V., Madini, N., Côté, M., Leonelli, R., Beaudry, J. N., Desjardins, P., & Masut, R. A. (2004). Evidence for large configuration-induced band-gap fluctuations in GaAs₁₋ₓNₓ alloys. Physical Review. B, Condensed Matter and Materials Physics, 70(3), 35315.1-35315.5. External link

Beaudry, J.-N., Masut, R. A., Desjardins, P., Wei, P., Chicoine, M., Bentoumi, G., Leonelli, R., Schiettekatte, F., & Guillon, S. (2004). Organometallic vapor phase epitaxy of GaAs₁₋ₓNₓ alloy layers on GaAs(001): Nitrogen incorporation and lattice parameter variation. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 22(3), 771-775. External link

T

Turcotte, S., Beaudry, J.-N., Masut, R. A., Desjardins, P., Bentoumi, G., & Leonelli, R. (2012). Abnormal Broadening of the Optical Transitions in (Ga,As)N/GaAs Quantum Wells. Physical Review B, 85(3), 033304 (4 pages). External link

Turcotte, S., Beaudry, J. N., Masut, R. A., Desjardins, P., Bentoumi, G., & Leonelli, R. (2008). Experimental Investigation of the Variation of the Absorption Coefficient With Nitrogen Content in GaasN and GaInAsN Grown on GaAs (001). Journal of Applied Physics, 104(8), 083511. External link

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