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Documents dont l'auteur est "Bentoumi, G."

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Aller à : 2013 | 2012 | 2011 | 2008 | 2004
Nombre de documents: 7

2013

Bentoumi, G., Li, L., Jonkmans, G., Marleau, G., Sur, B., Fritzsche, H., & Dai, X. (2013). Characterization of a liquid scintillator based on linear alkyl benzene for neutron detection. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 701, 221-224. Lien externe

2012

Turcotte, S., Beaudry, J.-N., Masut, R. A., Desjardins, P., Bentoumi, G., & Leonelli, R. (2012). Abnormal Broadening of the Optical Transitions in (Ga,As)N/GaAs Quantum Wells. Physical Review B, 85(3), 033304 (4 pages). Lien externe

2011

Bentoumi, G., Dai, X., Ho, A., Jonkmans, G., Li, L., & Marleau, G. (juin 2011). Simulation and design of a neutron detector based on Boron-Loaded linear alkyl benzene (LAB) liquid scintillator [Communication écrite]. 32nd Annual Conference of the CNS, Niagara Falls, Canada. Non disponible

2008

Turcotte, S., Beaudry, J. N., Masut, R. A., Desjardins, P., Bentoumi, G., & Leonelli, R. (2008). Experimental Investigation of the Variation of the Absorption Coefficient With Nitrogen Content in GaasN and GaInAsN Grown on GaAs (001). Journal of Applied Physics, 104(8), 083511. Lien externe

Bentoumi, G., Yaïche, Z., Leonelli, R., Beaudry, J. N., Desjardins, P., & Masut, R. A. (2008). Low-Temperature Emission in Dilute GaAsN Alloys Grown by Metalorganic Vapor Phase Epitaxy. Journal of Applied Physics, 103(6), 063526-1-063526-5. Lien externe

2004

Bentoumi, G., Timoshevskii, V., Madini, N., Côté, M., Leonelli, R., Beaudry, J. N., Desjardins, P., & Masut, R. A. (2004). Evidence for large configuration-induced band-gap fluctuations in GaAs₁₋ₓNₓ alloys. Physical Review. B, Condensed Matter and Materials Physics, 70(3), 35315.1-35315.5. Lien externe

Beaudry, J.-N., Masut, R. A., Desjardins, P., Wei, P., Chicoine, M., Bentoumi, G., Leonelli, R., Schiettekatte, F., & Guillon, S. (2004). Organometallic vapor phase epitaxy of GaAs₁₋ₓNₓ alloy layers on GaAs(001): Nitrogen incorporation and lattice parameter variation. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 22(3), 771-775. Lien externe

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