Items where Author is "Attiaoui, A."

A

Atalla, M. R. M., Assali, S., Koelling, S., Attiaoui, A., & Moutanabbir, O. (2023). Dark current in monolithic extended-SWIR GeSn PIN photodetectors. Applied Physics Letters, 122(3), 031103 (6 pages). External link

Assali, S., Koelling, S., Abboud, Z., Nicolas, J., Attiaoui, A., & Moutanabbir, O. (2022). 500-period epitaxial Ge/Si0.18Ge0.82 multi-quantum wells on silicon. Journal of Applied Physics, 132(17), 175304 (9 pages). External link

Assali, S., Attiaoui, A., Koelling, S., Atalla, M. R. M., Kumar, A., Nicolas, J., Chowdhury, F. A., Lemieux-Leduc, C., & Moutanabbir, O. (2022). Micrometer-thick, atomically random Si0.06Ge0.90Sn0.04 for silicon-integrated infrared optoelectronics. Journal of Applied Physics, 132(19), 11 pages. External link

Attiaoui, A., Bouthillier, E., Daligou, G., Kumar, A., Assali, S., & Moutanabbir, O. (2021). Extended Short-Wave Infrared Absorption in Group-IV Nanowire Arrays. Physical Review Applied, 15(1), 014034 (11 pages). External link

C

Carnio, B. N., Attiaoui, A., Assali, S., Moutanabbir, O., & Elezzabi, A. Y. (2022, July). Extracting the linear terahertz properties of thin films using complementary transmission and reflection measurements: Applied to GeSn thin films [Paper]. International Conference on Ultrafast Phenomena (UP) 2022, Montreal, Quebec. External link

G

Grange, T., Mukherjee, S., Capellini, G., Montanari, M., Persichetti, L., Di Gaspare, L., Birner, S., Attiaoui, A., Moutanabbir, O., Virgilio, M., & De Seta, M. (2022, September). Microscopic modeling of interface roughness scattering and application to the simulation of quantum cascade lasers [Paper]. International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2022), Turin, Italy. External link

Grange, T., Mukherjee, S., Capellini, G., Montanari, M., Persichetti, L., Di Gaspare, L., Birner, S., Attiaoui, A., Moutanabbir, O., Virgilio, M., & De Seta, M. (2020). Atomic-Scale Insights into Semiconductor Heterostructures: From Experimental Three-Dimensional Analysis of the Interface to a Generalized Theory of Interfacial Roughness Scattering. Physical Review Applied, 13(4), 14 pages. External link

M

Mukherjee, S., Attiaoui, A., Watanabe, H., Isheim, D., Seidman, D. N., & Moutanabbir, O. (2015, May). 3D atom-by-atom mapping of emerging group IV semiconductors [Poster]. 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI 2015), Montréal, Québec. Unavailable