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Atalla, M., Assali, S., Koelling, S., Daligou, G., Attiaoui, A., Luo, L., Lemieux-Leduc, C., Abdi, S., & Moutanabbir, O. (mai 2022). Mid-infrared silicon-integrated high-bandwidth GeSn PIN photodetectors and LEDs [Communication écrite]. Conference on Lasers and Electro-Optics (CLEO 2022), San José, CA, USA (2 pages). Lien externe
Atalla, M. R. M., Assali, S., Attiaoui, A., Lemieux-Leduc, C., Kumar, A., Abdi, S., & Moutanabbir, O. (2021). All-Group IV Transferable Membrane Mid-Infrared Photodetectors. Advanced Functional Materials, 31(3), 9 pages. Lien externe
Atalla, M. R. M., Assali, S., Attiaoui, A., Lemieux-Leduc, C., Kumar, A., Abdi, S., & Moutanabbir, O. (mai 2021). GeSn membrane mid-infrared photodetectors [Communication écrite]. Conference on Lasers and Electro-Optics (CLEO 2021), San José, CA, USA (2 pages). Lien externe
Abdi, S. (2020). Towards Ultra-Low Specific Contact Resistance On High Sn-Content GeSn For Mid-Infrared Optoelectronics [Mémoire de maîtrise, Polytechnique Montréal]. Disponible
Assali, S., Attiaoui, A., Atalla, M. R. M., Dijkstra, A., Aashish, K., Mukherjee, S., Abdi, S., & Moutanabbir, O. (mai 2020). Epitaxial GeSn and its integration in MIR optoelectronics [Communication écrite]. Science and Innovations 2020 (CLEO), Washington, D.C.. Lien externe
Groell, L., Abdi, S., Assali, S., Atalla, M., Attiaoui, A., & Moutanabbir, O. (mai 2020). Germanium Tin Surface Passivation and Its Effect on the Optoelectronic Performances [Communication écrite]. 237th ECS Meeting with the 18th International Meeting on Chemical Sensors (IMCS 2020), Montreal, Canada. Lien externe
Abdi, S., Atalla, M., Assali, S., Kumar, A., Groell, L., Koelling, S., & Moutanabbir, O. (2020). Towards Ultra-Low Specific Contact Resistance on P-Type and N-Type Narrow Bandgap GeSn Semiconductors. ECS Meeting Abstracts, MA2020-01(22), 1322-1322. Lien externe
Assali, S., Abdi, S., Atalla, M., Attiaoui, A., Bouthillier, É., Del Vecchio, P., Groell, L., Kumar, A., Luo, L., Mukherjee, S., Nicolas, J., & Moutanabbir, O. (octobre 2019). (Si)GeSn Semiconductors for Integrated Optoelectronics, Quantum Electronics, and More [Résumé]. 236th ECS Meeting, Atlanta, GA. Publié dans ECS Meeting Abstracts, MA2019-02(25). Lien externe
