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Documents dont l'auteur est "Aït-Ouali, A."

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Nombre de documents: 8

A

Aït-Ouali, A., Brebner, J. L., Yip, R. Y. F., & Masut, R. A. (1999). Analysis of the Stokes shift in InAsP/InP and InGaP/InP multiple quantum wells. Journal of Applied Physics, 86(12), 6803-6809. Lien externe

Aït-Ouali, A., Chennouf, A., Yip, R. Y. F., Brebner, J. L., Leonelli, R., & Masut, R. A. (1998). Localization of Excitons by Potential Fluctuations and Its Effect on the Stokes Shift in InGaP/InP Quantum Confined Heterostructures. Journal of Applied Physics, 84(10), 5639-5642. Lien externe

Aït-Ouali, A., Yip, R. Y. F., Brebner, J. L., & Masut, R. A. (1998). Strain Relaxation and Exciton Localization Effects on the Stokes Shift in InAsₓP₁₋ₓ/InP Multiple Quantum Wells. Journal of Applied Physics, 83(6), 3153-3160. Lien externe

B

Beaudoin, M., Desjardins, P., Aït-Ouali, A., Brebner, J. L., Yip, R. Y. F., Marchand, H., Isnard, L., & Masut, R. A. (2000). Optical properties and heterojunction band alignment in fully coherent strain-compensated InAsₓP₁₋ₓ /GayIn₁₋yP multilayers on InP(001). Journal of Applied Physics, 87(5), 2320-2326. Lien externe

G

Guillon, S., Yip, R. Y.-F., Desjardins, P., Chicoine, M., Bougrioua, Z., Beaudoin, M., Aït-Ouali, A., & Masut, R. A. (1998). Low-pressure organometallic vapor phase epitaxy of coherent InGaAsP/InP and InGaAsP/InAsP multilayers on InP(001). Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 16(2), 781-785. Lien externe

Y

Yip, R. Y.-F., Desjardins, P., Isnard, L., Aït-Ouali, A., Bensaada, A., Marchand, H., Brebner, J. L., Currie, J. F., & Masut, R. A. (1998). Band alignment and barrier height considerations for the quantum-confined Stark effect. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 16(2), 801-804. Lien externe

Yip, R. Y. F., Desjardins, P., Isnard, L., Aït-Ouali, A., Marchand, H., Brebner, J. L., Currie, J. F., & Masut, R. A. (1998). Band Alignment Engineering for High Speed, Low Drive Field Quantum-Confined Stark Effect Devices. Journal of Applied Physics, 83(3), 1758-1769. Lien externe

Yip, R. Y.-F., Aït-Ouali, A., Bensaada, A., Desjardins, P., Beaudoin, M., Isnard, L., Brebner, J. L., Currie, J. F., & Masut, R. A. (1997). Strain and relaxation effects in InAsP/InP multiple quantum well optical modulator devices grown by metalorganic vapor phase epitaxy. Journal of Applied Physics, 81(4), 1905-1915. Lien externe

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