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Growth, characterization and design of INP-based strained-layer multiple quantum wells for optical modulator devices

Raymond Yew-Fai Yip

PhD thesis (1997)

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Cite this document: Yip, R. Y.-F. (1997). Growth, characterization and design of INP-based strained-layer multiple quantum wells for optical modulator devices (PhD thesis, École Polytechnique de Montréal). Retrieved from https://publications.polymtl.ca/8547/
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Abstract

Experimental methods and background -- Sample cleaning -- Growth of strained-layer, InP-based thin film materials by MOVPE -- Structural characterization by x-ray diffraction -- Wet chemical etching of InP in HCI-based solutions -- Au-based contact contact metallizations on InP -- Measurement of field-dependent absorption curves by photocurrent detection -- Detailed balance efficiency limit in quantum well solar cells -- Strain and relaxation in multiple quantum well stacks -- Band alignment engineering for the quantum-confined stark effect -- Band alignment engineering for high-speed, low drive field quantum-confined stark effect devices.

Open Access document in PolyPublie
Additional Information: Le fichier PDF de ce document a été produit par Bibliothèque et Archives Canada selon les termes du programme Thèses Canada https://canada.on.worldcat.org/oclc/1017522538
Department: Département de génie physique
Date Deposited: 04 Aug 2021 11:06
Last Modified: 25 Aug 2021 14:59
PolyPublie URL: https://publications.polymtl.ca/8547/

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