<  Back to the Polytechnique Montréal portal

Effect of crystal orientation on indentation-induced residual stress field: Simulation and experimental validation

S. Breumier, A. Villani, C. Maurice, Martin Lévesque and G. Kermouche

Article (2019)

Published Version
Terms of Use: Creative Commons Attribution Non-commercial No Derivatives .
Download (2MB)
Cite this document: Breumier, S., Villani, A., Maurice, C., Lévesque, M. & Kermouche, G. (2019). Effect of crystal orientation on indentation-induced residual stress field: Simulation and experimental validation. Materials & Design, 169. doi:10.1016/j.matdes.2019.107659
Show abstract Hide abstract


Experimental determination of local residual stress fields beneath a spherical indent on a 001 copper single crystal revealed the presence of a significant tensile residual stress zone. This finding was adequately reproduced by Crystal Plasticity Finite Element simulations. Further simulations of one spherical indent on many other crystal orientations showed a strong variation of the residual stress field with crystal orientation. Accumulative effects of five superposing indents were simulated on two extreme orientations 001 and 111. The simulations showed that plastic anisotropy is responsible for potentially uneven compressive residual stresses after surface mechanical treatments.

Uncontrolled Keywords

High Angular Resolution Electron, Back-Scattered diffraction, Crystal plasticity finite element, Single crystal, Shot-peening

Open Access document in PolyPublie
Subjects: 2100 Génie mécanique > 2100 Génie mécanique
2100 Génie mécanique > 2103 Plasticité, fluage
Department: Département de génie mécanique
Research Center: Non applicable
Funders: CRSNG/NSERC - Discovery Grants Canada Research Chairs Programs
Grant number: RGPIN-06412-2016
Date Deposited: 13 Jul 2021 15:24
Last Modified: 14 Jul 2021 01:20
PolyPublie URL: https://publications.polymtl.ca/4805/
Document issued by the official publisher
Journal Title: Materials & Design (vol. 169)
Publisher: Elsevier
Official URL: https://doi.org/10.1016/j.matdes.2019.107659


Total downloads

Downloads per month in the last year

Origin of downloads


Repository Staff Only