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Flexible Ion-Gated Transistors Making Use of Poly-3-hexylthiophene (P3HT): Effect of the Molecular Weight on the Effectiveness of Gating and Device Performance

Tian Lan, Zhaojing Gao, Martin S. Barbosa and Clara Santato

Article (2020)

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Department: Department of Engineering Physics
PolyPublie URL: https://publications.polymtl.ca/45776/
Journal Title: Journal of Electronic Materials (vol. 49, no. 9)
Publisher: Springer
DOI: 10.1007/s11664-020-08242-3
Official URL: https://doi.org/10.1007/s11664-020-08242-3
Date Deposited: 18 Apr 2023 15:01
Last Modified: 05 Apr 2024 11:45
Cite in APA 7: Lan, T., Gao, Z., Barbosa, M. S., & Santato, C. (2020). Flexible Ion-Gated Transistors Making Use of Poly-3-hexylthiophene (P3HT): Effect of the Molecular Weight on the Effectiveness of Gating and Device Performance. Journal of Electronic Materials, 49(9), 5302-5307. https://doi.org/10.1007/s11664-020-08242-3

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