Flexible Ion-Gated Transistors Making Use of Poly-3-hexylthiophene (P3HT): Effect of the Molecular Weight on the Effectiveness of Gating and Device Performance

Tian Lan, Zhaojing Gao, Martin S. Barbosa and Clara Santato

Article (2020)

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Department:	Department of Engineering Physics
PolyPublie URL:	https://publications.polymtl.ca/45776/
Journal Title:	Journal of Electronic Materials (vol. 49, no. 9)
Publisher:	Springer
DOI:	10.1007/s11664-020-08242-3
Official URL:	https://doi.org/10.1007/s11664-020-08242-3
Date Deposited:	18 Apr 2023 15:01
Last Modified:	08 Apr 2025 07:11

Cite in APA 7:	Lan, T., Gao, Z., Barbosa, M. S., & Santato, C. (2020). Flexible Ion-Gated Transistors Making Use of Poly-3-hexylthiophene (P3HT): Effect of the Molecular Weight on the Effectiveness of Gating and Device Performance. Journal of Electronic Materials, 49(9), 5302-5307. https://doi.org/10.1007/s11664-020-08242-3
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