Gerard T. Barkema, Normand Mousseau
, Richard L. C. Vink and Partha Biswas
Paper (2001)
Document published while its authors were not affiliated with Polytechnique Montréal
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| Additional Information: | Article A28.1 |
|---|---|
| PolyPublie URL: | https://publications.polymtl.ca/41540/ |
| Conference Title: | Symposium A: Amorphous and Heterogeneous Silicon-Based Films |
| Conference Location: | San Francisco, Calif. |
| Conference Date(s): | 2001-04-16 - 2001-04-20 |
| Editors: | James B. Joyce, J. David Cohen, Jun-ichi Hanna, Robert W. Collins and Martin Stutzman |
| Publisher: | Proceedings of the Materials Research Society |
| DOI: | 10.1557/proc-664-a28.1 |
| Official URL: | https://doi.org/10.1557/proc-664-a28.1 |
| Date Deposited: | 18 Apr 2023 15:21 |
| Last Modified: | 08 Apr 2025 07:05 |
| Cite in APA 7: | Barkema, G. T., Mousseau, N., Vink, R. L. C., & Biswas, P. (2001, April). Basic mechanisms of structural relaxation and diffusion in amorphous silicon [Paper]. Symposium A: Amorphous and Heterogeneous Silicon-Based Films, San Francisco, Calif. (11 pages). https://doi.org/10.1557/proc-664-a28.1 |
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