P. St-Jean, G. Ethier-Majcher and Sébastien Francoeur
Article (2015)
An external link is available for this item
| Department: | Department of Engineering Physics |
|---|---|
| PolyPublie URL: | https://publications.polymtl.ca/34352/ |
| Journal Title: | Physical Review B (vol. 91, no. 11) |
| Publisher: | American Physical Society |
| DOI: | 10.1103/physrevb.91.115201 |
| Official URL: | https://doi.org/10.1103/physrevb.91.115201 |
| Date Deposited: | 18 Apr 2023 15:07 |
| Last Modified: | 25 Sep 2024 16:17 |
| Cite in APA 7: | St-Jean, P., Ethier-Majcher, G., & Francoeur, S. (2015). Dynamics of excitons bound to nitrogen isoelectronic centers in GaAs. Physical Review B, 91(11), 115201 (11 pages). https://doi.org/10.1103/physrevb.91.115201 |
|---|---|
Statistics
Dimensions
Repository Staff Only
|
View Item |
