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Dynamics of excitons bound to nitrogen isoelectronic centers in GaAs

P. St-Jean, G. Ethier-Majcher and Sébastien Francoeur

Article (2015)

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Department: Department of Engineering Physics
PolyPublie URL: https://publications.polymtl.ca/34352/
Journal Title: Physical Review B (vol. 91, no. 11)
Publisher: American Physical Society
DOI: 10.1103/physrevb.91.115201
Official URL: https://doi.org/10.1103/physrevb.91.115201
Date Deposited: 18 Apr 2023 15:07
Last Modified: 05 May 2023 15:39
Cite in APA 7: St-Jean, P., Ethier-Majcher, G., & Francoeur, S. (2015). Dynamics of excitons bound to nitrogen isoelectronic centers in GaAs. Physical Review B, 91(11), 115201 (11 pages). https://doi.org/10.1103/physrevb.91.115201

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