M. Bégin, Fadhel M. Ghannouchi, F. Beauregard, L. Selmi, B. Ricco and V. Borelli
Paper (1994)
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| Additional Information: | Nom historique du département: Département de génie électrique et de génie informatique |
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| Department: |
Department of Electrical Engineering Department of Computer Engineering and Software Engineering |
| ISBN: | 2863321579 |
| PolyPublie URL: | https://publications.polymtl.ca/33556/ |
| Conference Title: | ESSDERC`94 - 24th European Solid State Device Research Conference |
| Conference Location: | Edinburgh, UK |
| Conference Date(s): | 1994-09-11 - 1994-09-15 |
| Publisher: | Editions Frontières |
| Official URL: | https://ieeexplore.ieee.org/document/5435798 |
| Date Deposited: | 18 Apr 2023 15:25 |
| Last Modified: | 25 Sep 2024 16:16 |
| Cite in APA 7: | Bégin, M., Ghannouchi, F. M., Beauregard, F., Selmi, L., Ricco, B., & Borelli, V. (1994, September). Characterization of transient effects in the S-parameters of GaAs MESFETs by means of pulsed measurements [Paper]. ESSDERC`94 - 24th European Solid State Device Research Conference, Edinburgh, UK. https://ieeexplore.ieee.org/document/5435798 |
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