M. Bégin, Fadhel M. Ghannouchi, F. Beauregard, L. Selmi, B. Ricco, V. Borelli
Paper (1994)
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Nom historique du département: Département de génie électrique et de génie informatique
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ISBN:
2863321579
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Conference Title:
ESSDERC`94 - 24th European Solid State Device Research Conference
Conference Location:
Edinburgh, UK
Conference Date(s):
1994-09-11 - 1994-09-15
Publisher:
Editions Frontières
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OAI:
oai:publications.polymtl.ca:33556
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Date Deposited:
18 Apr 2023 15:25
Last Modified:
08 Oct 2026 17:44
Cite in APA 7:
Bégin, M., Ghannouchi, F. M., Beauregard, F., Selmi, L., Ricco, B., & Borelli, V. (1994, September). Characterization of transient effects in the S-parameters of GaAs MESFETs by means of pulsed measurements [Paper]. ESSDERC`94 - 24th European Solid State Device Research Conference, Edinburgh, UK. https://ieeexplore.ieee.org/document/5435798
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