Pierre Berini, Fadhel M. Ghannouchi and Rénato Bosisio
Paper (1997)
An external link is available for this item| Additional Information: | Nom historique du département: Département de génie électrique et de génie informatique |
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| Department: |
Department of Electrical Engineering Department of Computer Engineering and Software Engineering |
| Research Center: | POLY-GRAMES - Advanced Research Centre in Microwaves and Space Electronics |
| PolyPublie URL: | https://publications.polymtl.ca/30658/ |
| Conference Title: | IEEE instrumentation & measurements technology conference |
| Conference Location: | Ottawa, ON, Canada |
| Conference Date(s): | 1997-05-19 - 1997-05-21 |
| Publisher: | Institute of Electrical and Electronics Engineers |
| DOI: | 10.1109/imtc.1997.604036 |
| Official URL: | https://doi.org/10.1109/imtc.1997.604036 |
| Date Deposited: | 18 Apr 2023 15:23 |
| Last Modified: | 25 Sep 2024 16:12 |
| Cite in APA 7: | Berini, P., Ghannouchi, F. M., & Bosisio, R. (1997, May). Active load characterization of a microwave transistor for oscillator design [Paper]. IEEE instrumentation & measurements technology conference, Ottawa, ON, Canada. https://doi.org/10.1109/imtc.1997.604036 |
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