Chao Chen Wen, L. A. Hamel and Arthur Yelon
Article (1999)
An external link is available for this itemAdditional Information: | Nom historique du département: Département de génie physique et de génie des matériaux |
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Department: | Department of Engineering Physics |
Research Center: | GCM - Thin Film Physics and Technology Research Group |
PolyPublie URL: | https://publications.polymtl.ca/28492/ |
Journal Title: | Journal of Non-Crystalline Solids (vol. 258, no. 1-3) |
Publisher: | Elsevier |
DOI: | 10.1016/s0022-3093(99)00414-7 |
Official URL: | https://doi.org/10.1016/s0022-3093%2899%2900414-7 |
Date Deposited: | 18 Apr 2023 15:22 |
Last Modified: | 25 Sep 2024 16:09 |
Cite in APA 7: | Wen, C. C., Hamel, L. A., & Yelon, A. (1999). Multiple-trapping model with field-dependent effects on carrier time of flight in a-Si:H. Journal of Non-Crystalline Solids, 258(1-3), 223-233. https://doi.org/10.1016/s0022-3093%2899%2900414-7 |
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