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Multiple-trapping model with field-dependent effects on carrier time of flight in a-Si:H

Chao Chen Wen, L. A. Hamel and Arthur Yelon

Article (1999)

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Additional Information: Nom historique du département: Département de génie physique et de génie des matériaux
Department: Department of Engineering Physics
PolyPublie URL: https://publications.polymtl.ca/28492/
Journal Title: Journal of Non-Crystalline Solids (vol. 258, no. 1-3)
Publisher: Elsevier
DOI: 10.1016/s0022-3093(99)00414-7
Official URL: https://doi.org/10.1016/s0022-3093%2899%2900414-7
Date Deposited: 18 Apr 2023 15:22
Last Modified: 05 Apr 2024 11:16
Cite in APA 7: Wen, C. C., Hamel, L. A., & Yelon, A. (1999). Multiple-trapping model with field-dependent effects on carrier time of flight in a-Si:H. Journal of Non-Crystalline Solids, 258(1-3), 223-233. https://doi.org/10.1016/s0022-3093%2899%2900414-7

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