Room temperature air oxidation of nanostructured Si thin films with varying porosities as studied by X-ray photoelectron spectroscopy

D.-Q. Yang, Michel Meunier et Edward Sacher

Article de revue (2006)

Un lien externe est disponible pour ce document

Département:	Département de génie physique
URL de PolyPublie:	https://publications.polymtl.ca/22383/
Titre de la revue:	Journal of Applied Physics (vol. 99, no 8)
Maison d'édition:	American Institute of Physics
DOI:	10.1063/1.2193168
URL officielle:	https://doi.org/10.1063/1.2193168
Date du dépôt:	18 avr. 2023 15:18
Dernière modification:	05 avr. 2024 11:06

Citer en APA 7:	Yang, D.-Q., Meunier, M., & Sacher, E. (2006). Room temperature air oxidation of nanostructured Si thin films with varying porosities as studied by X-ray photoelectron spectroscopy. Journal of Applied Physics, 99(8), 084315-1-084315-6. https://doi.org/10.1063/1.2193168
APA 7 (HTML)ASCII CitationAtomBibTeXDOIsDublin CoreEndNote (.ENW)MARC (ISO 2709/UTF-8) (.MRC)MARC (UTF-8) (.MRK8)MARC XMLMPEG-21 DIDLMultiline CSVOAI-ORE Resource Map (Atom Format)OPENAIREOpenURL ContextObjectOpenURL ContextObject in SpanRDF+N-TriplesRDF+N3RDF+XMLReferReference Manager (.RIS)Répertoire des publications (EndNote)Simple Metadata

Statistiques

Actions réservées au personnel