Jiří Houška, Jolanta-Ewa Sapieha
and Ludvik Martinu
Article (2010)
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| Department: | Department of Engineering Physics |
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| PolyPublie URL: | https://publications.polymtl.ca/18162/ |
| Journal Title: | Journal of Applied Physics (vol. 107, no. 8) |
| Publisher: | American Institute of Physics |
| DOI: | 10.1063/1.3371680 |
| Official URL: | https://doi.org/10.1063/1.3371680 |
| Date Deposited: | 18 Apr 2023 15:13 |
| Last Modified: | 08 Apr 2025 01:45 |
| Cite in APA 7: | Houška, J., Sapieha, J.-E., & Martinu, L. (2010). Atom-by-atom simulations of chemical vapor deposition of nanoporous hydrogenated silicon nitride. Journal of Applied Physics, 107(8), 083501-083501. https://doi.org/10.1063/1.3371680 |
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