Zhen Zhang, Shi-Li Zhang, Bin Yang, Yu Zhu, Stephen M. Rossnagel, Simon Gaudet, Andrew J. Kellock, Jean Jordan-Sweet and Christian Lavoie
Article (2010)
An external link is available for this item| Department: | Department of Engineering Physics |
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| PolyPublie URL: | https://publications.polymtl.ca/17403/ |
| Journal Title: | Applied Physics Letters (vol. 96, no. 7) |
| Publisher: | American Institute of Physics |
| DOI: | 10.1063/1.3323097 |
| Official URL: | https://doi.org/10.1063/1.3323097 |
| Date Deposited: | 18 Apr 2023 15:14 |
| Last Modified: | 08 Apr 2025 01:45 |
| Cite in APA 7: | Zhang, Z., Zhang, S.-L., Yang, B., Zhu, Y., Rossnagel, S. M., Gaudet, S., Kellock, A. J., Jordan-Sweet, J., & Lavoie, C. (2010). Morphological stability and specific resistivity of sub-10 nm silicide films of Ni1-xPtx on Si substrate. Applied Physics Letters, 96(7), 071915-071915. https://doi.org/10.1063/1.3323097 |
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