Microstructure et propriétés électriques de l'oxyde de vanadium pour les microbolomètres

Recent technological breakthroughs in the fabrication of microsystems will soon allow the mass production of infrared cameras. Subsequent price cut will open many new sectors of application. Because of its electrical properties, sputtered vanadium oxide has already been identified as the leading candidate for the active material of microbolometers. However, the large number of different crystallographic phases, as well as the instable nature of reactive sputtering, have led to numerous contradictions in the existing literature. With the objective of understanding the impact of the deposition parameters on the microstructure, and of the microstructure on the electrical properties, vanadium oxide thin films have been deposited and characterised. In order to study their impact on the microstructure, oxidation state and pulse at the target, substrate bias and temperature, power, and film thickness were varied independently. The resulting thin films have been characterised by X-ray diffraction, Rutherford backscattering spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscopy, transmission electron microscopy, atomic force microscopy, spectral reflectometry, optical interferometry as well as four-point probe and Van Der Pauw electrical measurements. Because of the instability of the poisoning regime, the actual system configuration forbids the deposition of phases with composition between V3O7 and V7O3. Films deposited under a strong bias in the poisoned regime having the best properties, their growth mechanism has been thoroughly investigated. Under those conditions, the bombarding ions are energetic enough to modify the structure of the underlying thin film without resputtering it. A complex relation linking temperature, thickness and microstructure is observed. As the thickness is increased, the structure changes from amorphous, to almost monocristalline V2O5 (001) oriented, to polycristalline. For higher deposition power, the polycristalline section contains V3O7 in addition to the multiple orientations of V2O5. Those germinations which have already been observed but not explained in literature can be attributed to the accumulation of germination centers, a stress buildup for the crystalline sections, and a substrate heating caused by the ions bombardment. This last effect is also suggested to be the cause of the amorphous phase crystallisation for the films with longer deposition times. Films deposited at different temperatures show the same microstructure transitions. Two different behavior regimes can be proposed as function of the adatoms' energy.