Documents publiés en "2025"

Département de génie physique

Kaul, P., Karthein, J., Buchhorn, J., Kawano, T., Usubuchi, T., Ishihara, J., Rotaru, N., Del Vecchio, P., Concepción Díaz, O., Grützmacher, D., Zhao, Q.-T., Moutanabbir, O., Kohda, M., Schäpers, T., & Buca, D. M. (novembre 2025). Characterization of a two-dimensional hole gas in a GeSn quantum well system [Communication écrite]. 10th International Symposium on Control of Semiconductor Interfaces (ISCSI-X), the International Conference on Silicon Epitaxy and International SiGe Technology and Device Meeting (ICSI/ISTDM 2025), Yokohama-shi, Kanagawa, Japan. Non disponible

Kaul, P., Karthein, J., Buchhorn, J., Kawano, T., Usubuchi, T., Ishihara, J., Rotaru, N., Grützmacher, D., Zhao, Q.-T., Moutanabbir, O., Kohda, M., Schäpers, T., & Buca, D. (octobre 2025). Towards 1-D conduction in gate-defined quantum point contacts on GeSn quantum wells [Résumé]. ASPIRE Workshop on Quantum and Topological Materials (ASPIRE 2025), Sendai, Japan (2 pages). Lien externe