Monter d'un niveau |
Lussier, A. W., Bourbonnais-Sureault, D., Chicoine, M., Martel, R., Martinu, L., Roorda, S., & Schiettekatte, F. (2024). Raman-based mapping and depth-profiling of the relaxation state in amorphous silicon. Journal of Applied Physics, 135(6), 065301 (12 pages). Lien externe