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Rathore, J., Nanwani, A., Mukherjee, S., Das, S., Moutanabbir, O., & Mahapatra, S. (2021). Composition uniformity and large degree of strain relaxation in MBE-grown thick GeSn epitaxial layers, containing 16% Sn. Journal of Physics D: Applied Physics, 54(18), 185105 (10 pages). Lien externe
