Documents publiés en "2018"

Département de génie physique

Barbosa, M., Oliveira, F. M. B., Meng, X., Soavi, F., Santato, C., & Orlandi, M. O. (2018). Tungsten oxide ion gel-gated transistors: how structural and electrochemical properties affect the doping mechanism. Journal of Materials Chemistry C, 6(8), 1980-1987. Lien externe

Lan, T., Soavi, F., Marcaccio, M., Brunner, P.-L., Sayago, J., & Santato, C. (2018). Electrolyte-gated transistors based on phenyl-C-61-butyric acid methyl ester (PCBM) films: bridging redox properties, charge carrier transport and device performance. Chemical Communications, 54(43), 5490-5493. Lien externe