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Amer, M., Hassan, A., Ragab, A., Yacout, S., Savaria, Y., & Sawan, M. (mai 2018). High-Temperature Empirical Modeling for the I-V Characteristics of GaN150-Based HEMT [Communication écrite]. IEEE International Symposium on Circuits and Systems (ISCAS 2018), Florence, Italy. Lien externe
