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Abubakr, A., Hassan, A., Ragab, A., Yacout, S., Savaria, Y., & Sawan, M. (mai 2018). High-temperature modeling of the I-V characteristics of GaN150 HEMT using machine learning techniques [Communication écrite]. IEEE International Symposium on Circuits and Systems (ISCAS 2018), Florence, Italie (5 pages). Lien externe
