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Essig, S., Moutanabbir, O., Wekkeli, A., Nähme, H., Oliva, E., Bett, A. W., & Dimroth, F. (2013). Fast atom beam-activated n-Si/n-GaAs wafer bonding with high interfacial transparency and electrical conductivity. Journal of Applied Physics, 113(20). Lien externe
Fournier-Lupien, J.-H., Mukherjee, S., Wirths, S., Pippel, E., Hayazawa, N., Mussler, G., Hartmann, J. M., Desjardins, P., Buca, D., & Moutanabbir, O. (2013). Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys. Applied Physics Letters, 103(26). Lien externe
Moutanabbir, O., Isheim, D., Blumtritt, H., Senz, S., Pippel, E., & Seidman, D. N. (2013). Colossal injection of catalyst atoms into silicon nanowires. Nature, 496(7443), 78-82. Lien externe
Tarun, A., Hayazawa, N., Balois, M. V., Kawata, S., Reiche, M., & Moutanabbir, O. (2013). Stress redistribution in individual ultrathin strained silicon nanowires: a high-resolution polarized Raman study. New Journal of Physics, 15(5). Disponible
Wirths, S., Stefanov, S., Fournier-Lupien, J.-H., Ikonić, Z., Chiussi, S., Moutanabbir, O., Tiedemann, A., Bernardy, P., Holländer, B., Mussler, G., Stoica, T., Hartmann, J.-M., Grützmacher, D., Mantl, S., & Buca, D. M. (juin 2013). Growth and Exploitation of Strained Ge/(Si)GeSn Heterostructures for Optical, Electrical and Thermoelectric Applications [Communication écrite]. 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI 2013), Fukuoka, Japan. Non disponible
