 | Monter d'un niveau |
Béland, L. K., Anahory, Y., Smeets, D., Guihard, M., Brommer, P., Joly, J.-F., Pothier, J.-C., Lewis, L. J., Mousseau, N., & Schiettekatte, F. (2013). Replenish and Relax: Explaining Logarithmic Annealing in Ion-Implanted c-Si. Physical Review Letters, 111(10), 105502 (5 pages). Lien externe
Joly, J.-F., Béland, L. K., Brommer, P., & Mousseau, N. (2013). Contribution of vacancies to relaxation in amorphous materials: A kinetic activation-relaxation technique study. Physical Review B, 87(14), 144204 (6 pages). Lien externe
