 | Monter d'un niveau |
Foo, Y. L., Bratland, K. A., Cho, B., Desjardins, P., & Greene, J. E. (2003). Si₁₋yCy/Si(001) gas-source molecular beam epitaxy from Si₂H₆ and CH₃SiH₃: surface reaction paths and growth kinetics. Journal of Applied Physics, 93(7), 3944-3950. Lien externe
