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Bégin, M., Ghannouchi, F. M., Beauregard, F., Selmi, L., Ricco, B., & Borelli, V. (septembre 1994). Characterization of transient effects in the S-parameters of GaAs MESFETs by means of pulsed measurements [Communication écrite]. ESSDERC`94 - 24th European Solid State Device Research Conference, Edinburgh, UK. Lien externe
Begin, M., Ghannouchi, F. M., Selmi, L., & Ricco, B. (mai 1994). Instantaneous S parameters measurements of MESFETs under burst bias conditions [Communication écrite]. IEEE Instrumentation and Measurement Technology Conference (IMTC 1994), Hamamatsu, Japan. Lien externe
