 | Monter d'un niveau |
Bekkay, T., Piyakis, K., Diawara, Y., Sacher, E., Yelon, A., & Currie, J. F. (1991). Band bending and Fermi level shifts in phosphorus-doped hydrogenated amorphous silicon studied by X-ray photoelectron spectroscopy. Surface Science, 258(1-3), 190-196. Lien externe
