Documents dont l'auteur est "St-Jean, P."

Article de revue

Ethier-Majcher, G., St-Jean, P., & Francoeur, S. (2018). Energy reversal of light- and heavy-hole excitons bound to isoelectronic centers. Physical Review B, 98(11), 6 pages. Lien externe

St-Jean, P., Ethier-Majcher, G., Andre, R., & Francoeur, S. (2016). High-fidelity and ultrafast initialization of a hole-spin bound to a Te isoelectronic center in ZnSe. Physical Review Letters, 117(16), 6 pages. Lien externe

St-Jean, P., Ethier-Majcher, G., & Francoeur, S. (2015). Dynamics of excitons bound to nitrogen isoelectronic centers in GaAs. Physical Review B, 91(11), 115201 (11 pages). Lien externe

Ethier-Majcher, G., St-Jean, P., & Francoeur, S. (2015). Light- and heavy-hole trions bound to isoelectronic centers. Physical Review B, 92(15), 8 pages. Lien externe

Éthier-Majcher, G., St-Jean, P., Boso, G., Tosi, A., Klem, J. F., & Francoeur, S. (2014). Complete quantum control of exciton qubits bound to isoelectronic centres. Nature Communications, 5(1). Lien externe

St-Jean, P., Seryogin, G. A., & Francoeur, S. (2010). Band gap of sphalerite and chalcopyrite phases of epitaxial ZnSnP2. Applied Physics Letters, 96(23), 231913-231913. Lien externe