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Documents dont l'auteur est "Shtinkov, Nikolay"

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Aller à : 2007 | 2004 | 2003 | 2002
Nombre de documents: 6

2007

Beaudry, J.-N., Shtinkov, N., Masut, R. A., Desjardins, P., & Jiménez Riobóo, R. J. (2007). Compositional dependence of the elastic constants of dilute GaAs₁₋ₓNₓ alloys. Journal of Applied Physics, 101(11), 113507-1. Lien externe

2004

Shtinkov, N., Turcotte, S., Beaudry, J.-N., Desjardins, P., & Masut, R. A. (2004). Electronic and Optical Properties of Gaasn/Gaas Quantum Wells: a Tight-Binding Study. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 22(4), 1606-1609. Lien externe

2003

Saraydarov, M., Donchev, V., Kirilov, K., Germanova, K., & Shtinkov, N. (2003). An Alternative Approach to the Electronic-Structure Calculation of Crescent-Shaped Gaas/Algaas Quantum Wires. Journal of Materials Science-Materials in Electronics, 14(10-12), 795-796. Lien externe

Shtinkov, N., Desjardins, P., & Masut, R. A. (2003). Empirical tight-binding model for the electronic structure of dilute GaNAs alloys. Physical Review. B, Condensed Matter and Materials Physics, 67(8), 081202. Lien externe

Shtinkov, N., Desjardins, P., & Masut, R. A. (décembre 2002). Lateral confinement of carriers in ultrathin semiconductor quantum wells [Communication écrite]. 4th International Conference on Low Dimensional Structures and Devices (LDSD 2002), Fortaleza, Brazil. Publié dans Microelectronics Journal, 34(5-8). Lien externe

2002

Shtinkov, N., Desjardins, P., & Masut, R. A. (2002). Electronic states of ultrathin InAs/InP (001) quantum wells: a tight-binding study of the effects of band offset, strain, and intermixing. Physical Review. B, Condensed Matter and Materials Physics, 66(19), 195303 (8 pages). Lien externe

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