 | Monter d'un niveau |
Abou-Khalil, M., Schreurs, D., Matsui, T., & Wu, K. (décembre 1997). Calculation of the HF characteristics in high electron mobility transistors by considering capture and escape phenomena in the Monte Carlo technique [Communication écrite]. Asia-Pacific Microwave Conference (APMC 1997), Hong Kong. Lien externe
Abou Khalil, M., Schreurs, D., Nauwelaers, B., Van Rossum, M., Maciejko, R., & Wu, K. (1997). Effect of capture and escape phenomena in Monte Carlo technique on the simulation of the nonlinear characteristics in high electron mobility transistors. Journal of Applied Physics, 82(12), 6312-6318. Lien externe
