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Allen, C. N., Ortner, G., Dion, C., Poole, P. J., Barrios, P., Lapointe, J., Pakulski, G., Render, W., Fafard, S., & Raymond, S. (2006). External-Cavity Quantum-Dot Laser Tunable Through 1.55 μm. Applied Physics Letters, 88(11). Lien externe
Dion, C., Desjardins, P., Shtinkov, N., Schiettekatte, F., Poole, P. J., & Raymond, S. (2008). Effects of grown-in defects on interdiffusion dynamics in inAs/InP(001) quantum dots subjected to rapid thermal annealing. Journal of Applied Physics, 103(8), 083526-083526. Lien externe
Dion, C., Desjardins, P., Shtinkov, N., Robertson, M. D., Schiettekatte, F., Poole, P. J., & Raymond, S. (2008). Intermixing during growth of InAs self-assembled quantum dots in InP: a photoluminescence and tight-binding investigation. Physical Review. B, Condensed Matter and Materials Physics, 77(7), 075338-1. Lien externe
Dion, C., Desjardins, P., Schiettekatte, F., Chicoine, M., Robertson, M. D., Shtinkov, N., Poole, P. J., Wu, X., & Raymond, S. (2008). Vacancy-Mediated Intermixing in Inas/Inp(001) Quantum Dots Subjected to Ion Implantation. Journal of Applied Physics, 104(4), 043527-1. Lien externe
Dion, C., Desjardins, P., Chicoine, M., Schiettekatte, F., Poole, P. J., & Raymond, S. (2007). Drastic Ion-Implantation-Induced Intermixing During the Annealing of Self-Assembled InSs/InP(001) Quantum Dots. Nanotechnology, 18(1), 15404-15500. Lien externe
Dion, C., Poole, P. J., Raymond, S., Desjardins, P., & Schiettekatte, F. (2006). Tuning of the electronic properties of self-assembled InAs/InP(001) quantum dots using grown-in defect mediated intermixing. Applied Physics Letters, 89(13), 31905-31905. Lien externe
Girard, J. F., Dion, C., Desjardins, P., Allen, C. N., Poole, P. J., & Raymond, S. (2004). Tuning of the Electronic Properties of Self-Assembled Inas/Inp(001) Quantum Dots by Rapid Thermal Annealing. Applied Physics Letters, 84(17), 3382-3384. Lien externe
Ortner, G., Allen, C. N., Dion, C., Barrios, P., Poitras, D., Dalacu, D., Pakulski, G., Lapointe, J., Poole, P. J., Render, W., & Raymond, S. (2006). External Cavity InAs/InP Quantum Dot Laser With a Tuning Range of 166 Nm. Applied Physics Letters, 88(12). Lien externe
Raymond, S., Labrie, D., Girard, J.-F., Poirier, S., Awirothananon, S., Poole, P. J., Marchand, H., Desjardins, P., & Masut, R. A. (novembre 2000). Tuning of the electronic properties of self-assembled InAs/InP quantum dots by rapid thermal annealing [Communication écrite]. Semiconductor quantum dots II, Boston, USA. Non disponible
