Documents dont l'auteur est "Kemp, M."

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Bisson, M., Kemp, M., & Meunier, M. (1989). Fabrication and characterization of the amorphous-silicon static induction transistor. IEEE Transactions on Electron Devices, 36(12), 2844-2847. Lien externe

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Chen, W. C., Kemp, M., Hamel, L. A., & Yelon, A. (2000). Rapid Relaxation and Electronic Properties of a-Si : H. Journal of Non-Crystalline Solids, 277(2-3), 219-224. Lien externe

Chen, W. C., Hamel, L. A., Kemp, M., & Yelon, A. (1999). Modelling of Drift Mobility Experiments on a-Si:H. MRS Proceedings, 557, 433-438. Lien externe

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Kemp, M., Meunier, M., & Tannous, C. G. (1989). Simulation of the amorphous silicon static induction transistor. Solid-State Electronics, 32(2), 149-157. Lien externe

Kemp, M., Tannous, C. G., & Meunier, M. (1988). Amorphous silicon device simulation by an adapted Gummel method. IEEE Transactions on Electron Devices, 35(9), 1510-1513. Lien externe

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Meunier, M., Bisson, M., & Kemp, M. (1989). Amorphous silicon static induction transistor. Journal of Non-Crystalline Solids, 115(1-3), 108-110. Lien externe