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Dousset, D., Issaoun, A., Ghannouchi, F. M., & Kouki, A. B. (2005). Wideband Closed-Form Expressions for Direct Extraction of Hbt Small-Signal Parameters for All Amplifier Bias Classes. IEE Proceedings. Circuits Devices and Systems, 152(5), 441-450. Lien externe
Dousset, D., Issaoun, A., Kouki, A. B., & Ghannouchi, F. M. (janvier 2002). Small signal HBT modeling [Communication écrite]. 2002 Asia pacific microwave conference (APMC'02), Kyoto, Japan. Non disponible
Issaoun, A., Ghannouchi, F. M., & Kouki, A. B. (décembre 2005). Importance of the absolute electrical length of the outphasing combiner in LINC amplification systems [Communication écrite]. 2005 Asia pacific microwave conference (APMC'05). Lien externe
Issaoun, A., Ghannouchi, F. M., & Kouki, A. B. (2005). An accurate and compact large signal model for III-V HBT devices. Solid-State Electronics, 49(12), 1909-1916. Lien externe
Issaoun, A., Barrak, R., Kouki, A. B., Ghannouchi, F. M., & Akyel, C. (2004). An Enhanced Empirical Large-Signal Model for Hbts With Performance Comparable With Physics-Based Models. IEE proceedings. Science, measurement and technology, 151(3), 142-150. Lien externe
Issaoun, A., Dousset, D., Kouki, A. B., & Ghannouchi, F. M. (mai 2004). A novel temperature-dependent gummel-poon based large signal for accurate modeling of heterojunction bipolar transistors [Communication écrite]. IEEE Canadian Conference on Electrical and Computer Engineering, Niagara, Canada. Lien externe
Issaoun, A., Kouki, A. B., & Ghannouchi, F. M. (mai 2004). Scaling expression for DC parameters of a gummel-poon based model for HBTs [Communication écrite]. IEEE Canadian Conference on Electrical and Computer Engineering, Niagara, Canada. Lien externe
Issaoun, A., Kouki, A. B., & Ghannouchi, F. M. (mai 2004). Symbolically defined empirical large-signal model for HBTs compared to the gummel-poon model [Communication écrite]. IEEE Canadian Conference on Electrical and Computer Engineering, Niagara, Canada. Lien externe
Issaoun, A., Kouki, A. B., & Ghannouchi, F. M. (octobre 2004). A user compiled large signal model for GaAs heterojunction bipolar transistors [Communication écrite]. 12th European GaAs Application Symposium, Amsterdam, Hollande. Lien externe
