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Dousset, D., Issaoun, A., Ghannouchi, F. M., & Kouki, A. B. (2005). Wideband Closed-Form Expressions for Direct Extraction of Hbt Small-Signal Parameters for All Amplifier Bias Classes. IEE Proceedings. Circuits Devices and Systems, 152(5), 441-450. External link
Dousset, D., Issaoun, A., Kouki, A. B., & Ghannouchi, F. M. (2002, January). Small signal HBT modeling [Paper]. 2002 Asia pacific microwave conference (APMC'02), Kyoto, Japan. Unavailable
Issaoun, A., Ghannouchi, F. M., & Kouki, A. B. (2005, December). Importance of the absolute electrical length of the outphasing combiner in LINC amplification systems [Paper]. 2005 Asia pacific microwave conference (APMC'05). External link
Issaoun, A., Ghannouchi, F. M., & Kouki, A. B. (2005). An accurate and compact large signal model for III-V HBT devices. Solid-State Electronics, 49(12), 1909-1916. External link
Issaoun, A., Barrak, R., Kouki, A. B., Ghannouchi, F. M., & Akyel, C. (2004). An Enhanced Empirical Large-Signal Model for Hbts With Performance Comparable With Physics-Based Models. IEE proceedings. Science, measurement and technology, 151(3), 142-150. External link
Issaoun, A., Dousset, D., Kouki, A. B., & Ghannouchi, F. M. (2004, May). A novel temperature-dependent gummel-poon based large signal for accurate modeling of heterojunction bipolar transistors [Paper]. IEEE Canadian Conference on Electrical and Computer Engineering, Niagara, Canada. External link
Issaoun, A., Kouki, A. B., & Ghannouchi, F. M. (2004, May). Scaling expression for DC parameters of a gummel-poon based model for HBTs [Paper]. IEEE Canadian Conference on Electrical and Computer Engineering, Niagara, Canada. External link
Issaoun, A., Kouki, A. B., & Ghannouchi, F. M. (2004, May). Symbolically defined empirical large-signal model for HBTs compared to the gummel-poon model [Paper]. IEEE Canadian Conference on Electrical and Computer Engineering, Niagara, Canada. External link
Issaoun, A., Kouki, A. B., & Ghannouchi, F. M. (2004, October). A user compiled large signal model for GaAs heterojunction bipolar transistors [Paper]. 12th European GaAs Application Symposium, Amsterdam, Hollande. External link
