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Documents dont l'auteur est "Ishihara, Jun"

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Nombre de documents: 3

Kaul, P., Karthein, J., Buchhorn, J., Kawano, T., Usubuchi, T., Ishihara, J., Rotaru, N., Del Vecchio, P., Concepción Díaz, O., Grützmacher, D., Zhao, Q.-T., Moutanabbir, O., Kohda, M., Schäpers, T., & Buca, D. M. (novembre 2025). Characterization of a two-dimensional hole gas in a GeSn quantum well system [Communication écrite]. 10th International Symposium on Control of Semiconductor Interfaces (ISCSI-X), the International Conference on Silicon Epitaxy and International SiGe Technology and Device Meeting (ICSI/ISTDM 2025), Yokohama-shi, Kanagawa, Japan. Non disponible

Kaul, P. B., Karthein, J., Buchhorn, J., Kawano, T., Usubuchi, T., Ishihara, J., Rotaru, N., Del Vecchio, P., Concepción, O., Ikonić, Z., Grützmacher, D., Zhao, Q.-T., Moutanabbir, O., Kohda, M., Schäpers, T., & Buca, D. (2025). GeSn quantum wells as a platform for spin-resolved hole transport. Communications Materials, 6(1), 216. Lien externe

Kaul, P., Karthein, J., Buchhorn, J., Kawano, T., Usubuchi, T., Ishihara, J., Rotaru, N., Grützmacher, D., Zhao, Q.-T., Moutanabbir, O., Kohda, M., Schäpers, T., & Buca, D. (octobre 2025). Towards 1-D conduction in gate-defined quantum point contacts on GeSn quantum wells [Résumé]. ASPIRE Workshop on Quantum and Topological Materials (ASPIRE 2025), Sendai, Japan (2 pages). Lien externe

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