D. Côté, Jean-Pol Dodelet, B. A. Lombos and J. I. Dickson
Article (1986)
An external link is available for this item| Department: | Department of Engineering Physics |
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| PolyPublie URL: | https://publications.polymtl.ca/69946/ |
| Journal Title: | Journal of The Electrochemical Society (vol. 133, no. 9) |
| Publisher: | Institute of Physics |
| DOI: | 10.1149/1.2109051 |
| Official URL: | https://doi.org/10.1149/1.2109051 |
| Date Deposited: | 19 Nov 2025 16:18 |
| Last Modified: | 19 Nov 2025 16:18 |
| Cite in APA 7: | Côté, D., Dodelet, J.-P., Lombos, B. A., & Dickson, J. I. (1986). Epitaxy of GaAs by the Close‐Spaced Vapor Transport Technique. Journal of The Electrochemical Society, 133(9), 1925-1934. https://doi.org/10.1149/1.2109051 |
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